Includes bibliographical references and index.

The International Conference on Silicon Carbide and Related Materials (ICSCRM) is the most important technical conference series on silicon carbide (SiC) and related materials. Started in Washington, D.C. in 1987, the conference series developed into a bi-annual global forum on SiC from its crystal growth to the reliability in application. After five conferences in the U.S., ICSCRM has been held every two years, alternating between USA, Europe, and Japan. The last three Conferences were held in Giardini Naxos, Italy (2015), Washington, D.C. , USA (2017), and Kyoto, Japan (2019). Due to the pandemic situation in 2020 and 2021, the alternating European edition, the 13th ECSCRM, has been held in 2021, and the 19th ICSCRM has been postponed to 2022. The 19th edition of ICSCRM will be the last of its kind - starting in 2023, the conference series will be united with the European edition. It will form an annual event under the well-established name ICSCRM and a new rotation schedule integrating the SiC communities worldwide. Silicon Carbide, Epitaxial Growth, Wafer, Chemical Vapor Deposition, Dislocation, Basal Plane Dislocation, Etching, Thin Film, Crystal, Implantation, Doping, Passivation, Laser Annealing, Substrate, Electrical Properties, Star-Defect, Point Defect, Defect Inspection, MOSFET, JFET, Diode, Integrated Circuit, High Power Device, Schottky Diode, Reliability.

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